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| 1300 nm Laser in Coaxial Package with SM-Pigtail, High Power STH 51004X STH 51005X * * * * Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and control of radiant power * Hermetically sealed subcomponent, similar to TO 18 * SM Pigtail with optional flange Type STH 51004G STH 51004A STH 51005G STH 51005A Ordering Code Q62702-P3002 Q62702-Pxxxx Q62702-P3083 Q62702-Pxxxx Connector/Flange FC / without flange DIN / without flange FC / with flange DIN / with flange Component with other connector types on request. Maximum Ratings Output power ratings refer to the SM fiber output. The operating temperature of the submount is identical to the case temperature. Parameter Module Operating temperature range at case Storage temperature range Soldering temperature tmax = 10 s, 2 mm distance from bottom edge of case Laserdiode Direct forward current Radiant power CW Reverse voltage Symbol Values Unit TC Tstg TS - 40 ... + 85 - 40 ... + 85 260 C C C IF max e 120 4 2 mA mW V VR max 1 Semiconductor Group 02.95 STH 51004X STH 51005X Maximum Ratings (cont'd) Parameter Monitor Diode Reverse voltage Symbol Values Unit VR max 10 V Characteristics All optical data refer to a coupled 10/125 m SM fiber, TC = 25 C. Parameter Laser Diode Optical output power Emission wavelength center of range e = 0.5 mW Spectral bandwidth e = 0.5 mW (RMS) Threshold current (- 40 ... + 85 C) Forward voltage e = 0.5 mW Radiant power at threshold Slope efficiency Differential series resistance Rise time/Fall time Monitor Diode Dark current, VR = 5 V, e = 0 Photo current, e = 0.5 mW e > 2.4 1280 ... 1330 <5 2 ... 45 < 1.5 < 80 40 ... 160 <8 <1 mW nm nm mA V W mW/A ns Symbol Values Unit Ith VF eth rS tR, tF IR IP < 500 100 ... 1000 nA A Semiconductor Group 2 STH 51004X STH 51005X Laser Diode Radiant Power in Singlemode Fiber Relative Radiant Power e = f() 2 1.8 Relative Optical Power 0 5 10 15 20 Forward Current in mA 1.6 Optical Power in mW 1.4 1.2 1 0.8 0.6 0.4 0.2 0 100 90 80 70 60 50 40 30 20 10 0 1306 1308 1310 1312 1314 Wavelength in nm Laser Forward Current IF = f(VF) Monitor Diode Dark Current IR = f(TA) port = 0, VR = 5 V 100 90 Forward Current in mA 80 70 60 50 40 30 20 10 0 0 0.4 0.8 1.2 1.6 Forward Voltage in V Dark Current in nA 1000 100 10 1 0.1 0.01 -50 0 50 100 Temperature in C Semiconductor Group 3 STH 51004X STH 51005X Package Outlines (Dimensions in mm) STH 51004X STH 51005X (with flange) Semiconductor Group 4 |
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